vs-60epf0.pbf, vs-60cpf0.pbf series www.vishay.com vishay semiconductors revision: 18-aug-11 1 document number: 94104 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery rectifier diode, 60 a features ? designed and qualified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications wher e severe restrictions on conducted emi sh ould be met description the vs-60epf..pbf and vs-60cpf..pbf fast soft recovery rectifier series has been optimized for combined short reverse recovery time an d low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe te mperature and power cycling conditions. product summary package to-247ac modified (2 pins), to-247ac i f(av) 60 a v r 200 v, 400 v, 600 v v f at i f 1.3 v i fsm 830 a t rr 70 ns t j max. 150 c diode variation single die snap factor 0.5 to-247ac modified to-247ac 2 13 base cathode anode anode base cathode 2 13 anode cathode vs-60cpf.. vs-60epf.. major ratings and characteristics symbol characteristics values units v rrm 200 to 600 v i f(av) sinusoidal waveform 60 a i fsm 830 t rr 1 a, 100 a/s 70 ns v f 30 a, t j = 25 c 1.1 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-60EPF02PBF, vs-60cpf02pbf 200 300 5 vs-60epf04pbf, vs-60cpf04pbf 400 500 vs-60epf06pbf, vs-60cpf06pbf 600 700 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 106 c, 180 conducti on half sine wave 60 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 700 10 ms sine pulse, no voltage reapplied 830 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 2450 a 2 s 10 ms sine pulse, no voltage reapplied 3460 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 34 600 a 2 ? s
vs-60epf0.pbf, vs-60cpf0.pbf series www.vishay.com vishay semiconductors revision: 18-aug-11 2 document number: 94104 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 60 a, t j = 25 c 1.3 v forward slope resistance r t t j = 150 c 5.0 m ? threshold voltage v f(to) 0.88 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 5.0 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 60 apk 25 a/s 25 c 180 ns reverse recovery current i rr 3.4 a reverse recovery charge q rr 0.5 c snap factor s typical 0.5 i fm t rr dir dt i rm(rec) q rr t t a t b thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.4 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (ibf in) maximum 12 (10) marking device case style to-247ac modifi ed 60epf02, 60epf04, 60epf06 case style to-247ac 60cpf02, 60cpf04, 60cpf06
vs-60epf0.pbf, vs-60cpf0.pbf series www.vishay.com vishay semiconductors revision: 18-aug-11 3 document number: 94104 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 150 0 maximum allowable case temperature (c) average forward current (a) 10 100 20 70 120 130 110 30 50 140 40 90 60 60.pf.. series r thjc (dc) = 0.4 k/w conduction angle 30 60 90 120 1 8 0 ? 150 040 maximum allowable case temperature (c) average forward current (a) 8 0 110 100 120 20 130 140 100 90 60 30 60 90 120 1 8 0 dc ? conduction period 60.pf.. series r thjc (dc) = 0.4 k/w 10 0 90 0 maximum average forward power loss (w) average forward current (a) 50 40 70 50 30 20 30 10 20 60 40 180 120 90 60 30 conduction angle 60.pf.. series t j = 150 c rms limit 60 70 80 ? 0 140 0 maximum average forward power loss (w) average forward current (a) 60 100 20 40 100 20 60 120 80 80 40 ? conduction period 60.pf.. series t j = 150 c 180 120 90 60 30 dc rms limit 8 00 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 400 200 300 500 700 600 at any rated load condition and with rated v rrm applied following surge. initial t j = 175 c at 60 hz 0.00 8 3 s at 50 hz 0.0100 s 60.pf.. series 200 0.01 0.1 peak half sine wave forward current (a) pulse train duration (s) 500 100 300 400 700 900 1 600 8 00 maximum non-repetitive surge current versus pulse train duration. initial t j = 195 c no voltage reapplied rated v rrm reapplied 60.pf.. series
vs-60epf0.pbf, vs-60cpf0.pbf series www.vishay.com vishay semiconductors revision: 18-aug-11 4 document number: 94104 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 0 1.5 3.5 instantaneous forward current (a) instantaneous forward voltage (v) 100 4.0 1.0 2.5 60.pf.. series t j = 25 c t j = 150 c 0.5 2.0 3.0 0.20 0 40 120 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.10 160 0.15 0.05 8 0 60.pf.. series t j = 25 c i fm = 1 a i fm = 5 a i fm = 10 a i fm = 30 a i fm = 60 a 0.10 10 40 60 8 0 100 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.30 0.40 0.20 0.45 20 60.pf.. series t j = 150 c i fm = 1 a i fm = 10 a i fm = 5 a i fm = 30 a i fm = 60 a 0.35 0.25 0.15 30 50 70 90 0 0 8 0 120 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 3 1 2 4 160 40 60.pf.. series t j = 25 c i fm = 60 a i fm = 30 a i fm = 10 a i fm = 5 a i fm = 1 a 0 10 30 40 50 100 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 1 2 3 4 5 20 60.pf.. series t j = 150 c i fm = 1 a i fm = 5 a i fm = 10 a i fm = 30 a i fm = 60 a 60 70 8 090
vs-60epf0.pbf, vs-60cpf0.pbf series www.vishay.com vishay semiconductors revision: 18-aug-11 5 document number: 94104 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 0 0 8 0 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10 20 5 15 40 60.pf.. series t j = 25 c i fm = 60 a i fm = 30 a i fm = 10 a i fm = 5 a i fm = 1 a 25 10 0 10 30 70 90 100 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 20 5 15 50 60.pf.. series t j = 150 c 20 40 60 8 0 i fm = 60 a i fm = 30 a i fm = 10 a i fm = 5 a i fm = 1 a 0.01 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 1 10 single pulse steady state value (dc operation) 60.pf.. series d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.0 8
vs-60epf0.pbf, vs-60cpf0.pbf series www.vishay.com vishay semiconductors revision: 18-aug-11 6 document number: 94104 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating (60 = 60 a) 3 - circuit configuration: e = single diode, 2 pins c = single diode, 3 pins 4 - package: p = to-247ac/ac modified 5 - type of silicon: f = fast recovery 6 - voltage code x 100 = v rrm 7 - pbf = lead (pb)-free 02 = 200 v 04 = 400 v 06 = 600 v device code 6 2 4 3 5 7 60 e p f 06 pbf 1 vs- 1 - vishay semiconductors product links to related documents dimensions to-247ac modified www.vishay.com/doc?95253 to-247ac www.vishay.com/doc?95223 part marking information to-247ac modified www.vishay.com/doc?95255 to-247ac www.vishay.com/doc?95226 spice model www.vishay.com/doc?95275
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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